Analysis of Subthreshold Transmission Characteristics for Gate Voltage and Doping Profiles of Asymmetric Double Gate MOSFET
نویسندگان
چکیده
منابع مشابه
Symmetric and Asymmetric Double Gate MOSFET Modeling
An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DGMOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical ...
متن کاملModelling of Parasitic Capacitances for Single-gate, Double-gate and Independent Double-gate MOSFET
This paper discusses the type of capacitances for Single Gate MOSFET and Double Gate MOSFET including their quantity. The effect of parasitic capacitance makes double gate MOSFET more suitable component for the designing of digital logic switches than single gate MOSFET. Here, we introducing Independent double gate MOSFET operation based on VeSFET concept. Then introducing with the total capaci...
متن کاملAnalysis of Split Gate Technology for Nano-scale Double Gate MOSFET devices
In the present paper we have done a comparative analysis of Dual Gate MOSFET having split gate architecture and conventional Dual Gate MOSFET architecture. Simulations have been performed using SILVACO-ATLAS tool, which shows significant improvement in characteristic of split gate architecture in comparison to the conventional structure. The split gate architecture consist two different materia...
متن کاملMonolithic DC-DC Converter Analysis And Mosfet Gate Voltage Optimization
The design of an efficient monolithic buck converter is presented in this paper. A low swing MOSFET gate drive technique is proposed that improves the efficiency characteristics of a DC-DC converter. A model of the parasitic impedances of a buck converter is developed. With this model, a design space is described which characterizes the integration of both active and passive devices of a buck...
متن کاملDesign of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have bee...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: International Journal of Control and Automation
سال: 2015
ISSN: 2005-4297,2005-4297
DOI: 10.14257/ijca.2015.8.3.05